Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, EFEITO MOSSBAUER, LASER
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RUDNO-RUDZIÑSKI, W et al. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, v. 101, n. 7, p. 0735018/1-073518/4, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2714686. Acesso em: 04 maio 2024.APA
Rudno-Rudziñski, W., Sek, G., Misiewicz, J., Lamas, T. E., & Quivy, A. A. (2007). The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, 101( 7), 0735018/1-073518/4. doi:10.1063/1.2714686NLM
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2024 maio 04 ] Available from: https://doi.org/10.1063/1.2714686Vancouver
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2024 maio 04 ] Available from: https://doi.org/10.1063/1.2714686
